VS-GB100TH120N Pricing (USD) [261pcs Stock]
- 1 pcs$177.68022
- 12 pcs$163.71967
- Part Number:
- VS-GB100TH120N
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- IGBT 1200V 200A 833W INT-A-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Power Driver Modules and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120N electronic components. VS-GB100TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB100TH120N Product Attributes
Part Number :
VS-GB100TH120N
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT 1200V 200A 833W INT-A-PAK
Series :
-
Part Status :
Active
IGBT Type :
-
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
200A
Power - Max :
833W
Vce(on) (Max) @ Vge, Ic :
2.35V @ 15V, 100A
Current - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
8.58nF @ 25V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
Double INT-A-PAK (3 + 4)
Supplier Device Package :
Double INT-A-PAK
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