Infineon Technologies - IPP90R1K0C3XKSA1

KEY Part #: K6418774

IPP90R1K0C3XKSA1 Pricing (USD) [76846pcs Stock]

  • 1 pcs$0.50882
  • 500 pcs$0.45433

Part Number:
IPP90R1K0C3XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 900V 5.7A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Transistors - IGBTs - Single, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Infineon Technologies IPP90R1K0C3XKSA1 electronic components. IPP90R1K0C3XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP90R1K0C3XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP90R1K0C3XKSA1 Product Attributes

Part Number : IPP90R1K0C3XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 900V 5.7A TO-220
Series : CoolMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 100V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3-1
Package / Case : TO-220-3