Rohm Semiconductor - RFN3BM2SFHTL

KEY Part #: K6456770

RFN3BM2SFHTL Pricing (USD) [194187pcs Stock]

  • 1 pcs$0.19047
  • 2,500 pcs$0.16079
  • 5,000 pcs$0.15275
  • 12,500 pcs$0.14701

Part Number:
RFN3BM2SFHTL
Manufacturer:
Rohm Semiconductor
Detailed description:
DIODE GEN PURP 200V 3A TO252. Diodes - General Purpose, Power, Switching 200V Vrm 3A Io Recovery Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Diodes - Zener - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Rohm Semiconductor RFN3BM2SFHTL electronic components. RFN3BM2SFHTL can be shipped within 24 hours after order. If you have any demands for RFN3BM2SFHTL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFN3BM2SFHTL Product Attributes

Part Number : RFN3BM2SFHTL
Manufacturer : Rohm Semiconductor
Description : DIODE GEN PURP 200V 3A TO252
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 980mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 10µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-252
Operating Temperature - Junction : 150°C (Max)

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