IRF6621TRPBF Pricing (USD) [193709pcs Stock]
- 1 pcs$0.48070
- 4,800 pcs$0.47831
- Part Number:
- IRF6621TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 12A DIRECTFET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Rectifiers - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF6621TRPBF electronic components. IRF6621TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6621TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6621TRPBF Product Attributes
Part Number :
IRF6621TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 12A DIRECTFET
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
12A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.1 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17.5nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1460pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.2W (Ta), 42W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET™ SQ
Package / Case :
DirectFET™ Isometric SQ
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