Infineon Technologies - IPD50N04S408ATMA1

KEY Part #: K6420885

IPD50N04S408ATMA1 Pricing (USD) [281080pcs Stock]

  • 1 pcs$0.13159
  • 2,500 pcs$0.12074

Part Number:
IPD50N04S408ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 40V 50A TO252-3-313.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD50N04S408ATMA1 Product Attributes

Part Number : IPD50N04S408ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 40V 50A TO252-3-313
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs : 22.4nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1780pF @ 6V
FET Feature : -
Power Dissipation (Max) : 46W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO252-3-313
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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