HN4B01JE(TE85L,F) Pricing (USD) [1309823pcs Stock]
- 1 pcs$0.02824
- Part Number:
- HN4B01JE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS NPN/PNP 50V 0.15A ESV PLN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) electronic components. HN4B01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4B01JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4B01JE(TE85L,F) Product Attributes
Part Number :
HN4B01JE(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS NPN/PNP 50V 0.15A ESV PLN
Series :
-
Part Status :
Active
Transistor Type :
NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max) :
150mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 10MA, 100MA
Power - Max :
100mW
Frequency - Transition :
80MHz
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-553
Supplier Device Package :
ESV
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