Vishay Siliconix - SI7194DP-T1-GE3

KEY Part #: K6407830

SI7194DP-T1-GE3 Pricing (USD) [837pcs Stock]

  • 3,000 pcs$0.58983

Part Number:
SI7194DP-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 25V 60A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Power Driver Modules and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7194DP-T1-GE3 electronic components. SI7194DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7194DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7194DP-T1-GE3 Product Attributes

Part Number : SI7194DP-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 25V 60A PPAK SO-8
Series : TrenchFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6590pF @ 15V
FET Feature : -
Power Dissipation (Max) : 5.4W (Ta), 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8

You May Also Be Interested In