Vishay Semiconductor Diodes Division - SE12DBHM3/I

KEY Part #: K6456800

SE12DBHM3/I Pricing (USD) [208636pcs Stock]

  • 1 pcs$0.17728
  • 2,000 pcs$0.15988
  • 6,000 pcs$0.15227

Part Number:
SE12DBHM3/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 3.2A TO263AC. Rectifiers 12A 100V AEC-Q101 ESD Rectifr
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Thyristors - SCRs - Modules and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division SE12DBHM3/I electronic components. SE12DBHM3/I can be shipped within 24 hours after order. If you have any demands for SE12DBHM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE12DBHM3/I Product Attributes

Part Number : SE12DBHM3/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 3.2A TO263AC
Series : Automotive, AEC-Q101, eSMP®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3.2A
Voltage - Forward (Vf) (Max) @ If : 1.15V @ 12A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 3µs
Current - Reverse Leakage @ Vr : 20µA @ 100V
Capacitance @ Vr, F : 90pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package : TO-263AC (SMPD)
Operating Temperature - Junction : -55°C ~ 175°C

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