STMicroelectronics - STI14NM65N

KEY Part #: K6415518

[12382pcs Stock]


    Part Number:
    STI14NM65N
    Manufacturer:
    STMicroelectronics
    Detailed description:
    MOSFET N-CH 650V 12A I2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single and Diodes - Rectifiers - Arrays ...
    Competitive Advantage:
    We specialize in STMicroelectronics STI14NM65N electronic components. STI14NM65N can be shipped within 24 hours after order. If you have any demands for STI14NM65N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STI14NM65N Product Attributes

    Part Number : STI14NM65N
    Manufacturer : STMicroelectronics
    Description : MOSFET N-CH 650V 12A I2PAK
    Series : MDmesh™ II
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 650V
    Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 380 mOhm @ 6A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
    Vgs (Max) : ±25V
    Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 50V
    FET Feature : -
    Power Dissipation (Max) : 125W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA