ON Semiconductor - FDMC8360LET40

KEY Part #: K6394122

FDMC8360LET40 Pricing (USD) [118199pcs Stock]

  • 1 pcs$0.31449
  • 3,000 pcs$0.31292

Part Number:
FDMC8360LET40
Manufacturer:
ON Semiconductor
Detailed description:
PT8 N-CH 40/20V POWER TRENCH MOS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in ON Semiconductor FDMC8360LET40 electronic components. FDMC8360LET40 can be shipped within 24 hours after order. If you have any demands for FDMC8360LET40, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMC8360LET40 Product Attributes

Part Number : FDMC8360LET40
Manufacturer : ON Semiconductor
Description : PT8 N-CH 40/20V POWER TRENCH MOS
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 27A (Ta), 141A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.1 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5300pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2.8W (Ta), 75W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Power33
Package / Case : 8-PowerWDFN

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