FDB060AN08A0 Pricing (USD) [47280pcs Stock]
- 1 pcs$0.82700
- 800 pcs$0.79334
- Part Number:
- FDB060AN08A0
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 75V 80A TO-263AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDB060AN08A0 electronic components. FDB060AN08A0 can be shipped within 24 hours after order. If you have any demands for FDB060AN08A0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB060AN08A0 Product Attributes
Part Number :
FDB060AN08A0
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 75V 80A TO-263AB
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
16A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
6 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5150pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
255W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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