PMZB670UPE,315 Pricing (USD) [1345244pcs Stock]
- 1 pcs$0.03483
- 10,000 pcs$0.03466
- Part Number:
- PMZB670UPE,315
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET P-CH 20V 680MA DFN1006B-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Thyristors - SCRs, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PMZB670UPE,315 electronic components. PMZB670UPE,315 can be shipped within 24 hours after order. If you have any demands for PMZB670UPE,315, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZB670UPE,315 Product Attributes
Part Number :
PMZB670UPE,315
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET P-CH 20V 680MA DFN1006B-3
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
850 mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id :
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.14nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
87pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
360mW (Ta), 2.7W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DFN1006B-3
Package / Case :
3-XFDFN
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