IRFM120ATF Pricing (USD) [283940pcs Stock]
- 1 pcs$0.13092
- 4,000 pcs$0.13027
- Part Number:
- IRFM120ATF
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 2.3A SOT-223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor IRFM120ATF electronic components. IRFM120ATF can be shipped within 24 hours after order. If you have any demands for IRFM120ATF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFM120ATF Product Attributes
Part Number :
IRFM120ATF
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 2.3A SOT-223
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
200 mOhm @ 1.15A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.4W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223-4
Package / Case :
TO-261-4, TO-261AA
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