Vishay Semiconductor Diodes Division - UGB8JT-E3/45

KEY Part #: K6456477

UGB8JT-E3/45 Pricing (USD) [120478pcs Stock]

  • 1 pcs$0.30701
  • 1,000 pcs$0.27950

Part Number:
UGB8JT-E3/45
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0A 25ns 100 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division UGB8JT-E3/45 electronic components. UGB8JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UGB8JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGB8JT-E3/45 Product Attributes

Part Number : UGB8JT-E3/45
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 8A TO263AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.75V @ 8A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 30µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -55°C ~ 150°C

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