ON Semiconductor - FCB110N65F

KEY Part #: K6397407

FCB110N65F Pricing (USD) [33558pcs Stock]

  • 1 pcs$1.88106
  • 800 pcs$1.87170

Part Number:
FCB110N65F
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 650V 35A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - JFETs, Diodes - Bridge Rectifiers, Diodes - Zener - Single and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in ON Semiconductor FCB110N65F electronic components. FCB110N65F can be shipped within 24 hours after order. If you have any demands for FCB110N65F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCB110N65F Product Attributes

Part Number : FCB110N65F
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 650V 35A D2PAK
Series : FRFET®, SuperFET® II
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 110 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4895pF @ 100V
FET Feature : -
Power Dissipation (Max) : 357W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB