IPDD60R102G7XTMA1 Pricing (USD) [31573pcs Stock]
- 1 pcs$1.30530
- Part Number:
- IPDD60R102G7XTMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET NCH 650V 66A PG-HDSOP-10.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPDD60R102G7XTMA1 electronic components. IPDD60R102G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPDD60R102G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPDD60R102G7XTMA1 Product Attributes
Part Number :
IPDD60R102G7XTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET NCH 650V 66A PG-HDSOP-10
Series :
CoolMOS™ G7
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
102 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id :
4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1320pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
139W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-HDSOP-10-1
Package / Case :
10-PowerSOP Module
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