IXFH4N100Q Pricing (USD) [16176pcs Stock]
- 1 pcs$2.94442
- 30 pcs$2.92977
- Part Number:
- IXFH4N100Q
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 4A TO-247AD.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in IXYS IXFH4N100Q electronic components. IXFH4N100Q can be shipped within 24 hours after order. If you have any demands for IXFH4N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH4N100Q Product Attributes
Part Number :
IXFH4N100Q
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 4A TO-247AD
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AD (IXFH)
Package / Case :
TO-247-3
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