Part Number :
RN1421TE85LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS PREBIAS NPN 200MW SMINI
Transistor Type :
NPN - Pre-Biased
Current - Collector (Ic) (Max) :
800mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
1 kOhms
Resistor - Emitter Base (R2) :
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 2mA, 50mA
Current - Collector Cutoff (Max) :
500nA
Frequency - Transition :
300MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
S-Mini