Description :
MOSFET 3N/3P-CH 60V 4A 12-SIP
FET Type :
3 N and 3 P-Channel (3-Phase Bridge)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
4A
Rds On (Max) @ Id, Vgs :
550 mOhm @ 2A, 4V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 10V
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
12-SIP w/fin