[1270pcs Stock]
- Part Number:
- IRF6709S2TR1PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 25V 12A DIRECTFET-S1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF6709S2TR1PBF electronic components. IRF6709S2TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6709S2TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6709S2TR1PBF Product Attributes
Part Number :
IRF6709S2TR1PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 12A DIRECTFET-S1
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
12A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.8 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1010pF @ 13V
FET Feature :
-
Power Dissipation (Max) :
1.8W (Ta), 21W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET S1
Package / Case :
DirectFET™ Isometric S1
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