IXYS - IXFA130N10T2

KEY Part #: K6394597

IXFA130N10T2 Pricing (USD) [30787pcs Stock]

  • 1 pcs$1.34832
  • 150 pcs$1.34161

Part Number:
IXFA130N10T2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 100V 130A TO-263AA.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Thyristors - TRIACs and Thyristors - SCRs ...
Competitive Advantage:
We specialize in IXYS IXFA130N10T2 electronic components. IXFA130N10T2 can be shipped within 24 hours after order. If you have any demands for IXFA130N10T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA130N10T2 Product Attributes

Part Number : IXFA130N10T2
Manufacturer : IXYS
Description : MOSFET N-CH 100V 130A TO-263AA
Series : GigaMOS™, HiPerFET™, TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9.1 mOhm @ 65A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 130nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXFA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB