FQP3N50C-F080 Pricing (USD) [61934pcs Stock]
- 1 pcs$0.63133
- Part Number:
- FQP3N50C-F080
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 500V 1.8A TO220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQP3N50C-F080 electronic components. FQP3N50C-F080 can be shipped within 24 hours after order. If you have any demands for FQP3N50C-F080, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP3N50C-F080 Product Attributes
Part Number :
FQP3N50C-F080
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 500V 1.8A TO220-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
365pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
62W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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