Vishay Siliconix - SIRA50DP-T1-RE3

KEY Part #: K6419466

SIRA50DP-T1-RE3 Pricing (USD) [113513pcs Stock]

  • 1 pcs$0.32584

Part Number:
SIRA50DP-T1-RE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 40V PWRPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - RF, Thyristors - SCRs, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRA50DP-T1-RE3 Product Attributes

Part Number : SIRA50DP-T1-RE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 40V PWRPAK SO-8
Series : TrenchFET® Gen IV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 62.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 194nC @ 10V
Vgs (Max) : +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds : 8445pF @ 20V
FET Feature : -
Power Dissipation (Max) : 6.25W (Ta), 100W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8