Infineon Technologies - IPA60R250CPXKSA1

KEY Part #: K6407299

IPA60R250CPXKSA1 Pricing (USD) [1022pcs Stock]

  • 500 pcs$0.77445

Part Number:
IPA60R250CPXKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V 12A TO220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Power Driver Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Infineon Technologies IPA60R250CPXKSA1 electronic components. IPA60R250CPXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA60R250CPXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA60R250CPXKSA1 Product Attributes

Part Number : IPA60R250CPXKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 12A TO220-3
Series : CoolMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 100V
FET Feature : -
Power Dissipation (Max) : 33W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-FP
Package / Case : TO-220-3 Full Pack

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