Microsemi Corporation - APT25GN120B2DQ2G

KEY Part #: K6422254

APT25GN120B2DQ2G Pricing (USD) [9465pcs Stock]

  • 1 pcs$4.37589
  • 56 pcs$4.35412

Part Number:
APT25GN120B2DQ2G
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 1200V 67A 272W TMAX.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Zener - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs and Power Driver Modules ...
Competitive Advantage:
We specialize in Microsemi Corporation APT25GN120B2DQ2G electronic components. APT25GN120B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT25GN120B2DQ2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT25GN120B2DQ2G Product Attributes

Part Number : APT25GN120B2DQ2G
Manufacturer : Microsemi Corporation
Description : IGBT 1200V 67A 272W TMAX
Series : -
Part Status : Active
IGBT Type : NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 67A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 25A
Power - Max : 272W
Switching Energy : 2.15µJ (off)
Input Type : Standard
Gate Charge : 155nC
Td (on/off) @ 25°C : 22ns/280ns
Test Condition : 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -

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