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  5. JAN1N5802US

Microsemi Corporation - JAN1N5802US

KEY Part #: K6426959

JAN1N5802US Pricing (USD) [7195pcs Stock]

  • 1 pcs$5.72756
  • 100 pcs$5.14244
Part Number:
JAN1N5802US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 50V 2.5A D5A. ESD Suppressors / TVS Diodes DIODE 1A 50V TRR 25NS
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Microsemi Corporation JAN1N5802US electronic components. JAN1N5802US can be shipped within 24 hours after order. If you have any demands for JAN1N5802US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5802US Product Attributes

Part Number : JAN1N5802US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 50V 2.5A D5A
Series : Military, MIL-PRF-19500/477
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 2.5A
Voltage - Forward (Vf) (Max) @ If : 975mV @ 2.5A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 1µA @ 50V
Capacitance @ Vr, F : 25pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, A
Supplier Device Package : D-5A
Operating Temperature - Junction : -65°C ~ 175°C

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