[9282pcs Stock]
- Part Number:
- IS43DR86400C-3DBI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Detailed description:
- IC DRAM 512M PARALLEL 60TWBGA. DRAM 512M, 1.8V, 333Mhz DDR2
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Embedded - Microprocessors, Memory - Controllers, PMIC - RMS to DC Converters, Embedded - System On Chip (SoC), Data Acquisition - Analog to Digital Converters (ADC), Embedded - PLDs (Programmable Logic Device), PMIC - Battery Management and IC Chips ...
- Competitive Advantage:
- We specialize in ISSI, Integrated Silicon Solution Inc IS43DR86400C-3DBI-TR electronic components. IS43DR86400C-3DBI-TR can be shipped within 24 hours after order. If you have any demands for IS43DR86400C-3DBI-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IS43DR86400C-3DBI-TR Product Attributes
Part Number :
IS43DR86400C-3DBI-TR
Manufacturer :
ISSI, Integrated Silicon Solution Inc
Description :
IC DRAM 512M PARALLEL 60TWBGA
Series :
-
Part Status :
Active
Memory Type :
Volatile
Memory Format :
DRAM
Technology :
SDRAM - DDR2
Memory Size :
512Mb (64M x 8)
Clock Frequency :
333MHz
Write Cycle Time - Word, Page :
15ns
Access Time :
450ps
Memory Interface :
Parallel
Voltage - Supply :
1.7V ~ 1.9V
Operating Temperature :
-40°C ~ 85°C (TA)
Mounting Type :
Surface Mount
Package / Case :
60-TFBGA
Supplier Device Package :
60-TWBGA (8x10.5)
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