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  5. FDP2D3N10C

ON Semiconductor - FDP2D3N10C

KEY Part #: K6394143

FDP2D3N10C Pricing (USD) [25659pcs Stock]

  • 1 pcs$1.60614
Part Number:
FDP2D3N10C
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 100V 222A TO220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FDP2D3N10C electronic components. FDP2D3N10C can be shipped within 24 hours after order. If you have any demands for FDP2D3N10C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP2D3N10C Product Attributes

Part Number : FDP2D3N10C
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 100V 222A TO220-3
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 222A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 152nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 11180pF @ 50V
FET Feature : -
Power Dissipation (Max) : 214W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3

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