Taiwan Semiconductor Corporation - 1N5406G B0G

KEY Part #: K6432076

1N5406G B0G Pricing (USD) [1159739pcs Stock]

  • 1 pcs$0.03189

Part Number:
1N5406G B0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
DIODE GEN PURP 600V 3A DO201AD.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation 1N5406G B0G electronic components. 1N5406G B0G can be shipped within 24 hours after order. If you have any demands for 1N5406G B0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5406G B0G Product Attributes

Part Number : 1N5406G B0G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 600V 3A DO201AD
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1V @ 3A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 25pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-201AD, Axial
Supplier Device Package : DO-201AD
Operating Temperature - Junction : -55°C ~ 150°C

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