ZXMN10A08E6TC Pricing (USD) [343563pcs Stock]
- 1 pcs$0.10766
- 10,000 pcs$0.09445
- Part Number:
- ZXMN10A08E6TC
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 100V 1.5A SOT23-6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - JFETs, Thyristors - DIACs, SIDACs and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXMN10A08E6TC electronic components. ZXMN10A08E6TC can be shipped within 24 hours after order. If you have any demands for ZXMN10A08E6TC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN10A08E6TC Product Attributes
Part Number :
ZXMN10A08E6TC
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 100V 1.5A SOT23-6
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
250 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
405pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
1.1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-26
Package / Case :
SOT-23-6
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