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ON Semiconductor - FCMT299N60

KEY Part #: K6397487

FCMT299N60 Pricing (USD) [51760pcs Stock]

  • 1 pcs$0.75920
  • 3,000 pcs$0.75543
Part Number:
FCMT299N60
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 600V 12A POWER88.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in ON Semiconductor FCMT299N60 electronic components. FCMT299N60 can be shipped within 24 hours after order. If you have any demands for FCMT299N60, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCMT299N60 Product Attributes

Part Number : FCMT299N60
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 600V 12A POWER88
Series : SuperFET® II
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 299 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1948pF @ 380V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Power88
Package / Case : 4-PowerTSFN

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