Diodes Incorporated - ZXMN3A02N8TA

KEY Part #: K6415196

[12493pcs Stock]


    Part Number:
    ZXMN3A02N8TA
    Manufacturer:
    Diodes Incorporated
    Detailed description:
    MOSFET N-CH 30V 5.3A 8-SOIC.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - Special Purpose, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Arrays ...
    Competitive Advantage:
    We specialize in Diodes Incorporated ZXMN3A02N8TA electronic components. ZXMN3A02N8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3A02N8TA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN3A02N8TA Product Attributes

    Part Number : ZXMN3A02N8TA
    Manufacturer : Diodes Incorporated
    Description : MOSFET N-CH 30V 5.3A 8-SOIC
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 7.3A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 25 mOhm @ 12A, 10V
    Vgs(th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 26.8nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 1.56W (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SO
    Package / Case : 8-SOIC (0.154", 3.90mm Width)

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