Vishay Semiconductor Diodes Division - VS-2EGH01-M3/5BT

KEY Part #: K6427796

VS-2EGH01-M3/5BT Pricing (USD) [569175pcs Stock]

  • 1 pcs$0.06498

Part Number:
VS-2EGH01-M3/5BT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 2A DO214AA.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-2EGH01-M3/5BT electronic components. VS-2EGH01-M3/5BT can be shipped within 24 hours after order. If you have any demands for VS-2EGH01-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EGH01-M3/5BT Product Attributes

Part Number : VS-2EGH01-M3/5BT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 2A DO214AA
Series : FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 23ns
Current - Reverse Leakage @ Vr : 2µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMBJ)
Operating Temperature - Junction : -55°C ~ 175°C

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