Toshiba Semiconductor and Storage - SSM6J215FE(TE85L,F

KEY Part #: K6416056

SSM6J215FE(TE85L,F Pricing (USD) [603363pcs Stock]

  • 1 pcs$0.06777
  • 4,000 pcs$0.06743

Part Number:
SSM6J215FE(TE85L,F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P CH 20V 3.4A ES6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6J215FE(TE85L,F electronic components. SSM6J215FE(TE85L,F can be shipped within 24 hours after order. If you have any demands for SSM6J215FE(TE85L,F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6J215FE(TE85L,F Product Attributes

Part Number : SSM6J215FE(TE85L,F
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P CH 20V 3.4A ES6
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10.4nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 630pF @ 10V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : ES6
Package / Case : SOT-563, SOT-666

You May Also Be Interested In
  • ZVNL110A

    Diodes Incorporated

    MOSFET N-CH 100V 320MA TO92-3.

  • VN10LP

    Diodes Incorporated

    MOSFET N-CH 60V 270MA TO92-3.

  • IRLR2905TRPBF

    Infineon Technologies

    MOSFET N-CH 55V 42A DPAK.

  • IRLR2703TRPBF

    Infineon Technologies

    MOSFET N-CH 30V 23A DPAK.

  • IRFR024NTRPBF

    Infineon Technologies

    MOSFET N-CH 55V 17A DPAK.

  • IRFR120NTRPBF

    Infineon Technologies

    MOSFET N-CH 100V 9.4A DPAK.