[12484pcs Stock]
- Part Number:
- PHD36N03LT,118
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 30V 43.4A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PHD36N03LT,118 electronic components. PHD36N03LT,118 can be shipped within 24 hours after order. If you have any demands for PHD36N03LT,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD36N03LT,118 Product Attributes
Part Number :
PHD36N03LT,118
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 30V 43.4A DPAK
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
43.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
17 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
690pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
57.6W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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