IPA60R750E6XKSA1 Pricing (USD) [59949pcs Stock]
- 1 pcs$0.65224
- Part Number:
- IPA60R750E6XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 5.7A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - JFETs and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPA60R750E6XKSA1 electronic components. IPA60R750E6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA60R750E6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA60R750E6XKSA1 Product Attributes
Part Number :
IPA60R750E6XKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 5.7A TO220
Series :
CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs :
17.2nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
373pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
27W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-FP
Package / Case :
TO-220-3 Full Pack
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