Part Number :
APTC90H12T2G
Manufacturer :
Microsemi Corporation
Description :
MOSFET 4N-CH 900V 30A SP2
FET Type :
4 N-Channel (H-Bridge)
FET Feature :
Super Junction
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
30A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 100V
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SP2