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  5. FDMS8018

ON Semiconductor - FDMS8018

KEY Part #: K6416586

FDMS8018 Pricing (USD) [121062pcs Stock]

  • 1 pcs$0.30552
  • 3,000 pcs$0.29366
Part Number:
FDMS8018
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 30A 8PQFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in ON Semiconductor FDMS8018 electronic components. FDMS8018 can be shipped within 24 hours after order. If you have any demands for FDMS8018, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS8018 Product Attributes

Part Number : FDMS8018
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 30A 8PQFN
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 30A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 61nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5235pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PQFN (5x6)
Package / Case : 8-PowerTDFN

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