[860pcs Stock]
- Part Number:
- TPC8031-H(TE12LQM)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 30V 11A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - IGBTs - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPC8031-H(TE12LQM) electronic components. TPC8031-H(TE12LQM) can be shipped within 24 hours after order. If you have any demands for TPC8031-H(TE12LQM), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8031-H(TE12LQM) Product Attributes
Part Number :
TPC8031-H(TE12LQM)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 11A SOP8 2-6J1B
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
13.3 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
2150pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP (5.5x6.0)
Package / Case :
8-SOIC (0.173", 4.40mm Width)
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