Vishay Semiconductor Diodes Division - 1N4151W-HE3-18

KEY Part #: K6439876

1N4151W-HE3-18 Pricing (USD) [2422835pcs Stock]

  • 1 pcs$0.01527
  • 10,000 pcs$0.01412

Part Number:
1N4151W-HE3-18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 50V 150MA SOD123. Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - IGBTs - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division 1N4151W-HE3-18 electronic components. 1N4151W-HE3-18 can be shipped within 24 hours after order. If you have any demands for 1N4151W-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4151W-HE3-18 Product Attributes

Part Number : 1N4151W-HE3-18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 50V 150MA SOD123
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 150mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 50mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 50nA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SOD-123
Supplier Device Package : SOD-123
Operating Temperature - Junction : -55°C ~ 150°C

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