ON Semiconductor - NTMFS4C35NT1G

KEY Part #: K6397292

NTMFS4C35NT1G Pricing (USD) [241532pcs Stock]

  • 1 pcs$0.15390
  • 1,500 pcs$0.15314

Part Number:
NTMFS4C35NT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 80A SO8FL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - JFETs, Power Driver Modules, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor NTMFS4C35NT1G electronic components. NTMFS4C35NT1G can be shipped within 24 hours after order. If you have any demands for NTMFS4C35NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS4C35NT1G Product Attributes

Part Number : NTMFS4C35NT1G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 80A SO8FL
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 12.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 15V
FET Feature : -
Power Dissipation (Max) : 780mW (Ta), 33W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN

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