1N914BTR Pricing (USD) [7603368pcs Stock]
- 1 pcs$0.00486
- 10,000 pcs$0.00407
- 30,000 pcs$0.00366
- 50,000 pcs$0.00325
- 100,000 pcs$0.00305
- 250,000 pcs$0.00271
- Part Number:
- 1N914BTR
- Manufacturer:
- ON Semiconductor
- Detailed description:
- DIODE GEN PURP 100V 200MA DO35. Diodes - General Purpose, Power, Switching Hi Conductance Fast
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor 1N914BTR electronic components. 1N914BTR can be shipped within 24 hours after order. If you have any demands for 1N914BTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N914BTR Product Attributes
Part Number :
1N914BTR
Manufacturer :
ON Semiconductor
Description :
DIODE GEN PURP 100V 200MA DO35
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
100V
Current - Average Rectified (Io) :
200mA
Voltage - Forward (Vf) (Max) @ If :
1V @ 100mA
Speed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Current - Reverse Leakage @ Vr :
5µA @ 75V
Capacitance @ Vr, F :
4pF @ 0V, 1MHz
Mounting Type :
Through Hole
Package / Case :
DO-204AH, DO-35, Axial
Supplier Device Package :
DO-35
Operating Temperature - Junction :
-65°C ~ 175°C
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