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  5. HGT1S7N60C3DS9A

ON Semiconductor - HGT1S7N60C3DS9A

KEY Part #: K6424350

[9339pcs Stock]

    Part Number:
    HGT1S7N60C3DS9A
    Manufacturer:
    ON Semiconductor
    Detailed description:
    IGBT 600V 14A 60W TO263AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Single ...
    Competitive Advantage:
    We specialize in ON Semiconductor HGT1S7N60C3DS9A electronic components. HGT1S7N60C3DS9A can be shipped within 24 hours after order. If you have any demands for HGT1S7N60C3DS9A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HGT1S7N60C3DS9A Product Attributes

    Part Number : HGT1S7N60C3DS9A
    Manufacturer : ON Semiconductor
    Description : IGBT 600V 14A 60W TO263AB
    Series : -
    Part Status : Obsolete
    IGBT Type : -
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 14A
    Current - Collector Pulsed (Icm) : 56A
    Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 7A
    Power - Max : 60W
    Switching Energy : 165µJ (on), 600µJ (off)
    Input Type : Standard
    Gate Charge : 23nC
    Td (on/off) @ 25°C : -
    Test Condition : 480V, 7A, 50 Ohm, 15V
    Reverse Recovery Time (trr) : 37ns
    Operating Temperature : -
    Mounting Type : Surface Mount
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Supplier Device Package : TO-263AB

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