IRFBF20LPBF Pricing (USD) [33399pcs Stock]
- 1 pcs$1.19870
- 10 pcs$1.02894
- 100 pcs$0.82679
- 500 pcs$0.64307
- 1,000 pcs$0.53283
- Part Number:
- IRFBF20LPBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 900V 1.7A TO-262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Thyristors - TRIACs, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFBF20LPBF electronic components. IRFBF20LPBF can be shipped within 24 hours after order. If you have any demands for IRFBF20LPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBF20LPBF Product Attributes
Part Number :
IRFBF20LPBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 900V 1.7A TO-262
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta), 54W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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