FDB0260N1007L Pricing (USD) [23921pcs Stock]
- 1 pcs$1.73154
- 800 pcs$1.72292
- Part Number:
- FDB0260N1007L
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 200A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDB0260N1007L electronic components. FDB0260N1007L can be shipped within 24 hours after order. If you have any demands for FDB0260N1007L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB0260N1007L Product Attributes
Part Number :
FDB0260N1007L
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 200A D2PAK
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.6 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
118nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8545pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 250W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263)
Package / Case :
TO-263-7, D²Pak (6 Leads + Tab)
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