Vishay Semiconductor Diodes Division - BYG21M-M3/TR

KEY Part #: K6439751

BYG21M-M3/TR Pricing (USD) [623641pcs Stock]

  • 1 pcs$0.05931
  • 10,800 pcs$0.05158

Part Number:
BYG21M-M3/TR
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5A,1000V,120nS Fast Avalanche,SMD
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYG21M-M3/TR electronic components. BYG21M-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG21M-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG21M-M3/TR Product Attributes

Part Number : BYG21M-M3/TR
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 1KV 1.5A
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1.5A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 120ns
Current - Reverse Leakage @ Vr : 1µA @ 1000V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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