ON Semiconductor - FCB20N60-F085

KEY Part #: K6393787

FCB20N60-F085 Pricing (USD) [21345pcs Stock]

  • 1 pcs$1.93083

Part Number:
FCB20N60-F085
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 600V 20A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Diodes - Rectifiers - Single, Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - RF and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in ON Semiconductor FCB20N60-F085 electronic components. FCB20N60-F085 can be shipped within 24 hours after order. If you have any demands for FCB20N60-F085, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCB20N60-F085 Product Attributes

Part Number : FCB20N60-F085
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 600V 20A D2PAK
Series : Automotive, AEC-Q101, SuperFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 198 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 102nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3080pF @ 25V
FET Feature : -
Power Dissipation (Max) : 341W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263AB
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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