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  5. FDB070AN06A0-F085

ON Semiconductor - FDB070AN06A0-F085

KEY Part #: K6399317

FDB070AN06A0-F085 Pricing (USD) [59662pcs Stock]

  • 1 pcs$0.65537
Part Number:
FDB070AN06A0-F085
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 60V 15A TO-263AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - TRIACs, Transistors - Special Purpose, Power Driver Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers and Diodes - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FDB070AN06A0-F085 electronic components. FDB070AN06A0-F085 can be shipped within 24 hours after order. If you have any demands for FDB070AN06A0-F085, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB070AN06A0-F085 Product Attributes

Part Number : FDB070AN06A0-F085
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 60V 15A TO-263AB
Series : Automotive, AEC-Q101, PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 175W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263AB
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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