Vishay Semiconductor Diodes Division - S5JHE3_A/I

KEY Part #: K6427527

S5JHE3_A/I Pricing (USD) [437834pcs Stock]

  • 1 pcs$0.08448
  • 3,500 pcs$0.07724

Part Number:
S5JHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 5A DO214AB. Rectifiers 5A 600V 100A@8.3ms Single Die Auto
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division S5JHE3_A/I electronic components. S5JHE3_A/I can be shipped within 24 hours after order. If you have any demands for S5JHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S5JHE3_A/I Product Attributes

Part Number : S5JHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 5A DO214AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 5A
Voltage - Forward (Vf) (Max) @ If : 1.15V @ 5A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2.5µs
Current - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 40pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AB, SMC
Supplier Device Package : DO-214AB (SMC)
Operating Temperature - Junction : -55°C ~ 150°C

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