Infineon Technologies - IRFP2907PBF

KEY Part #: K6403828

IRFP2907PBF Pricing (USD) [13671pcs Stock]

  • 1 pcs$2.48114
  • 10 pcs$2.21452
  • 100 pcs$1.81595
  • 500 pcs$1.47046
  • 1,000 pcs$1.24015

Part Number:
IRFP2907PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 75V 209A TO247AC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Special Purpose, Thyristors - SCRs and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Infineon Technologies IRFP2907PBF electronic components. IRFP2907PBF can be shipped within 24 hours after order. If you have any demands for IRFP2907PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFP2907PBF Product Attributes

Part Number : IRFP2907PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 75V 209A TO247AC
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 620nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 13000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 470W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AC
Package / Case : TO-247-3

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